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HOME   NEW PRODUCTS   800V M3 Series 3rd Generation Super Junction MOSFET

800V M3 Series 3rd Generation Super Junction MOSFET

2018-07-21

Wayon WMOSTM M3 is a new silicon-based cutting-edge technology for high voltage power MOSFET. Using advanced super junction principle, the technology can reduce RDS(on) per area significantly compared to conventional VDMOS. This technology achieves up to better FOM (RDS(on)*Qg) versus the previous WMOSTM C2 technology. This improvement makes switching applications more efficient and more compact. WMOSTM M3 provides 800V High voltage range MOSFETs and is cost-effective compared to C2 Series.   

 

Datasheet Download:WMx05N80M3 W0880007 V1.0.pdf

Datasheet Download:WMx06N80M3 W0880006 V1.0.pdf

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